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- 1. Appl. Phys. Lett. 89, 201911 (2006) , “Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures”, R. Liu, J. Mei, S. Srinivasan, F. A. Ponce, H. Omiya, Y. Narukawa, and T. MukaiThe authors have observed that for InxGa1−xN epitaxial layers grown on bulk GaN substrates exhibit slip on the basal plane, when in the presence of free surfaces that intercept the heterointerface and for indium compositions x0.07. This leads to... (Read more)
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Updated at 2010-07-20 16:50:39
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