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- 1. Appl. Phys. Lett. 90, 073507 (2007) , “Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise”, P. Magnone, F. Crupi, L. Pantisano, and C. PaceThe impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline... (Read more)
- 2. Appl. Phys. Lett. 90, 042105 (2007) , “Stress induced leakage current mechanism in thin Hf-silicate layers”, A. Paskaleva, M. Lemberger, and A. J. BauerStress induced leakage current (SILC) in thin Hf-silicate layers and the mechanisms of its creation are examined. A very strong polarity and thickness dependence as well as partial recovery of SILC are observed. It is suggested that the trapping in preexisting sites influences SILC by two ways: (1)... (Read more)
- 3. Appl. Phys. Lett. 89, 122112 (2006) , “Interface states for HfO2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias”, Osamu Maida, Ken-ichi Fukayama, Masao Takahashi, Hikaru Kobayashi, Young-Bae Kim, Hyun-Chul Kim, and Duck-Kyun ChoiA 1.0 nm silicon nitride (SiN) layer can prevent reaction between HfO2 and Si completely. In this case, the interface state spectra obtained from x-ray photoelectron spectroscopy measurements under bias have two peaks above and below the midgap, attributable to Si dangling bonds... (Read more)
- 4. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 5. IEEE Electron Device Lett. 25, 153 (2004) , “Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates”,
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Updated at 2010-07-20 16:50:39
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