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- 1. J. Appl. Phys. 101, 023516 (2007) , “Effect of screw dislocation density on optical properties in n-type wurtzite GaN”, Jeong Ho You and H. T. JohnsonThe effect of open-core screw dislocations on photoluminescence in n-doped wurtzite GaN epilayer is studied computationally and compared with experimental data. A k•p Hamiltonian calculation domain is set up to contain a dipole of open-core screw dislocations, and its size... (Read more)
- 2. Appl. Phys. Lett. 89, 092107 (2006) , “Photoluminescence studies of impurity transitions in AlGaN alloys”, N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centersisolated cation vacancy with three negative charges... (Read more)
- 3. Appl. Phys. Lett. 88, 161905 (2006) , “Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence”, M. Yoshikawa, R. Sugie, M. Murakami, T. Matsunobe, K. Matsuda, and H. IshidaWe developed a tapping-mode-scanning near-field optical microscope to measure near-field photoluminescence (SNOM-PL) with nanometer spatial resolution using an ultraviolet laser, and we measured the defect distribution of a Si-doped GaN film. The obtained result was compared with one measured by... (Read more)
- 4. Phys. Rev. B 74, 235205 (2006) , “Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in Mg-doped GaN”, G. N. Aliev, S. Zeng, S. J. Bingham, D. Wolverson, J. J. Davies, T. Wang, and P. J. ParbrookOptically-detected magnetic resonance (ODMR) experiments on magnesium-doped GaN produced by metal-organic vapor phase epitaxy show a group of strong signals with large linewidths (in excess of 0.15 Tesla) obtained when monitoring photoluminescence in the region between 5000 Å and 6200 ... (Read more)
- 5. Phys. Rev. B 74, 195205 (2006) , “Magnetopolaron effect on shallow donors in GaN”, A. Wysmoek, R. Stpniewski, M. Potemski, B. Chwalisz-Pitka, K. Pakua, J. M. Baranowski, D. C. Look, S. S. Park, and K. Y. LeeResonant interaction between longitudinal-optic (LO) phonons and electrons bound on shallow donors in GaN is studied using magnetoluminescence of neutral-donor bound excitons (D0X). The experiments were performed on high-quality freestanding GaN material and heteroepitaxial... (Read more)
- 6. Phys. Rev. B 74, 155310 (2006) , “Optical study of excitation and deexcitation of Tm in GaN quantum dots”, Thomas Andreev, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang, Bruno Daudin, and Bruno GayralWe report on the optical properties of molecular beam epitaxy grown GaN quantum dots (QDs) doped with Tm. Under optical excitation above the fundamental energy of GaN QDs, the fundamental transition emission from the GaN QD host was not observed while bright emission from Tm3+ manifolds... (Read more)
- 7. J. Vac. Sci. Technol. B 22, 120-125 (2004) , “Properties of Fe-doped semi-insulating GaN structures”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. PeartonThe properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2×1010 /square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at... (Read more)
- 8. Phys. Rev. B 69, 45208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 9. Phys. Rev. B 69, 45207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 10. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 11. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5×1018 to 5.0×1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 12. Phys. Rev. B 65, 205202 (2002) , “Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN”, L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour, B. W. WesselsIrradiation of p-type (Mg-doped) GaN in situ at 4.2 K by 2.5 MeV electrons reduces the visible luminescence and creates a broad luminescence band in the infrared at ?0.95?eV. Upon annealing at 180 K, partial recovery of the visible luminescence occurs and a well resolved S=1 center is observed by... (Read more)
- 13. Phys. Rev. B 65, 125207 (2002) , “Optical detection of electron paramagnetic resonance in low-dislocation-content GaN grown by hydride vapor-phase epitaxy”, C. Bozdog, G. D. Watkins, H. Sunakawa, N. Kuroda, A. UsuiThree broad overlapping photoluminescence bands, centered at ?1.75?eV (red), ?2.2?eV (yellow), and ?2.33?eV (green), are observed in low-dislocation-content GaN grown by the hydride vapor-phase epitaxy method. Optical detection of electron paramagnetic resonance (ODEPR) studies reveal that each is... (Read more)
- 14. Mater. Sci. Eng. R 33, 135-207 (2001) , “Comprehensive characterization of hydride VPE grown GaN layers and templates”, H. MorkoçGaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)
- 15. Physica B 308-310, 66-68 (2001) , “Electron paramagnetic resonance of GaN detected by recombination afterglow”, U. Rogulis, S. Schweizer and J. -M. SpaethX-irradiation at 4.2 K of GaN produces a long lasting recombination afterglow (RL). This afterglow quenches in high magnetic fields, but it can be increased by applying microwave radiation (93 GHz) yielding resonance lines (RL-EPR) for appropriate magnetic fields. For a free standing GaN... (Read more)
- 16. Physica B 304, 12 (2001) , “Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiation”, Yasuhiko Hayashi, Tetsuo Soga, Masayoshi Umeno, Takashi JimboThe yellow luminescence band in high-energy 7 MeV electron-irradiated n-GaN is investigated as a function of electron irradiation dose. Both the yellow-band intensity and the near-bandedge photoluminescence (PL) intensity decrease continually with increasing electron irradiation dose. The decrease... (Read more)
- 17. Phys. Rev. B 62, 16572 (2000) , “Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN”, Mt. Waganer, I. A. Buyanova, N. Q. Thinh, W. M. Chen, B. Monemar, J. L. Lindström, H. Amano, I. AkasakiProperties of the 0.88-eV photoluminescence (PL) in electron-irradiated wurtzite GaN have been investigated in detail by a combination of various magneto-optical techniques, including Zeeman measurements of PL, optically detected magnetic resonance (ODMR), and level anticrossing (LAC). ODMR... (Read more)
- 18. Phys. Rev. B 59, 12479-12486 (1999) , “Optical detection of electron paramagnetic resonance in electron-irradiated GaN”, C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, R. L. Henry2.5 MeV electron irradiation of wurtzite GaN epitaxially grown on sapphire substrates greatly reduces its near-UV and visible luminescence, producing two bands in the near infrared. In one of these, a broad structureless band centered at ∼0.95 eV, three optically detected S=1/2 electron... (Read more)GaN| ODMR PL electron-irradiation| 69Ga EM L1 L2 L3 L4 n-type semi-insulating .inp files: GaN/L3 GaN/L4 | last update: Takahide Umeda
- 19. J. Cryst. Growth 189-190, 561 (1998) , “Investigations of undoped and Mg-doped wurtzite GaN with luminescence-detected paramagnetic resonance in the 4 mm band”, F. K. Koschnick, K. Michael, J. -M. Spaeth, B. Beaumont, P. Gibart, J. Off, A. Sohmer and F. ScholzNominally undoped and Mg-doped wurtzite GaN grown with MOVPE on sapphire substrates were investigated with photoluminescence-detected electron paramagnetic resonance (PL-EPR). For enhanced resolution a microwave frequency of 72 GHz (V-band) was used. PL-EPR was measured via the yellow luminescence... (Read more)
- 20. Appl. Phys. Lett. 63, 2673 (1993) , “Observation of optically detected magnetic resonance in GaN films”, E. R. Glaser, T. A. Kennedy, H. C. Crookham, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaOptically detected magnetic resonance has been observed from GaN. Two magnetic resonances have been detected on the 2.2 eV-deep photoluminescence band. The first resonance is sharp [full width at half-maximum (FWHM) ~2.2 mT] with g=1.9515±0.0002 and... (Read more)
- 21. J. Appl. Phys. 74, 5901-5903 (1993) , “The nature of donor conduction in n-GaN”, M. Asif Khan, D. T. Olson, J. N. Kuznia, W. E. Carlos, J. A. Freitas, JrSingle crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type... (Read more)
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