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- 1. Phys. Rev. B 74, 235205 (2006) , “Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in Mg-doped GaN”, G. N. Aliev, S. Zeng, S. J. Bingham, D. Wolverson, J. J. Davies, T. Wang, and P. J. ParbrookOptically-detected magnetic resonance (ODMR) experiments on magnesium-doped GaN produced by metal-organic vapor phase epitaxy show a group of strong signals with large linewidths (in excess of 0.15 Tesla) obtained when monitoring photoluminescence in the region between 5000 Å and 6200 ... (Read more)
- 2. phys. stat. sol. (b) 210, 389 (1998) , “Spin-Dependent Processes and Mg-Acceptors in GaN Single Quantum Well Diodes and p-Type GaN Films”, M.W.Bayerl , M.S.Brandt , H.Angerer , O.Ambacher , M.StutzmannElectrically detected magnetic resonance (EDMR) measurements at 34 GHz were performed to obtain more information about the rate limiting transport processes in blue and green InGaN single quantum well light emitting diodes. With respect to g-factor and linewidth, two centers in both diodes... (Read more)
- 3. Appl. Phys. Lett. 70, 2019 (1997) , “Paramagnetic resonance in GaN-based single quantum wells”, W. E. Carlos , Shuji NakamuraWe report electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN single-quantum-well light emitting diodes. The dominant feature detected by either technique is a broad resonance (B13 mT) at g2.01 due to a deep... (Read more)
- 4. Mater. Res. Soc. Symp. Proc. 449, 579 (1997) , “Spin resonance investigations of GaN and AlGaN”, N.MReinacher , H.Angerer , O.Ambacher , M.S.Brandt , M.Stutzmann
- 5. phys. stat. sol. (a) 159, R5 (1997) , “Electrically Detected Magnetic Resonance (EDMR) of Defects in GaN Light Emitting Diodes”, M.W.Bayerl , M.S.Brandt , M.StutzmannCompared to standard Electron Spin Resonance (ESR), EDMR has proven to be a more sensitive method in detecting paramagnetic states in semiconductors. Its application to electronic devices is particularly interesting because performance limitations in electrical transport can be correlated with... (Read more)
- 6. Mater. Res. Soc. Symp. Proc. 395, 657 (1996) , “Spin-dependent transport in GaN Light emitting diodes”, M.S.Brandt , N.M.Reinacher , O.Ambacher , M.Stutzmann
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Updated at 2010-07-20 16:50:39
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