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- 1. J. Appl. Phys. 100, 013501 (2006) , “Contactless electromodulation spectroscopy of AlGaN/GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance”, R. Kudrawiec, M. Syperek, M. Motyka, J. Misiewicz, R. Paszkiewicz, B. Paszkiewicz, M. T?acza?aPhotoreflectance (PR) and contactless electroreflectance (CER) spectroscopies have been applied to study optical transitions in undoped and Si-doped AlGaN/GaN heterostructures at room temperature. Spectral features related to excitonic and band-to-band absorptions in GaN layer and band-to-band... (Read more)
- 2. Phys. Rev. B 74, 245216 (2006) , “Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors”, Hideharu MatsuuraThe density (NA) and energy level (EA) of an acceptor in a p-type wide-band-gap semiconductor (e.g., SiC, GaN, and diamond) are determined by a least-squares fit of the charge neutrality equation to the temperature dependence of the hole... (Read more)
- 3. Phys. Rev. B 48, 15144-15147 (1993) , “Conduction-electron spin resonance in zinc-blende GaN thin films”, M. Fanciulli, T.Lei, T.D.MoustakasWe report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533±0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was... (Read more)
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Updated at 2010-07-20 16:50:39
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