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- 1. Appl. Phys. Lett. 87, 221903 (2005) , “Oxygen segregation to dislocations in GaN”, M. E. Hawkridge and D. ChernsThe structure and composition of threading dislocations in GaN grown by hydride vapor phase epitaxy have been examined by electron microscopy. Transmission electron microscopy showed that the core structure of screw dislocations varied widely, alternating irregularly between open core... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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