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- 1. Appl. Phys. Lett. 89, 241911 (2006) , “Defect and stress characterization of AlN films by Raman spectroscopy”, Vanni Lughi and David R. ClarkeRaman spectroscopy was used to characterize the residual stress and defect density of AlN thin films reactively sputtered on silicon (100). The authors studied the correlation between the shift of the E2 (high) phonon of AlN at 658 cm−1 and the film biaxial stress... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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