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- 1. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 2. Phys. Rev. B 1, 1986-1994 (1970) , “Electron Paramagnetic Resonance of V3 + Ions in Zinc Oxide”, G. Filipovich, A. L. Taylor, R. E. CoffmanThe paramagnetic resonance of trace amounts of V3+ in single-crystal hexagonal zinc oxide is reported. The EPR spectrum is fitted with an axially symmetric spin Hamiltonian with five empirically determined parameters: D, gII, g?, A, and B. The spin-Hamiltonian... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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Others(101 tags)
Technique
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Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
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Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)