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- 1. Phys. Rev. B 75, 113310 (2007) , “Hole spin polarization in GaAs:Mn/AlAs multiple quantum wells”, V. F. Sapega, O. Brandt, M. Ramsteiner, K. H. Ploog, I. E. Panaiotti, and N. S. AverkievWe study the effect of confinement on the spin polarization of holes bound to Mn acceptors in paramagnetic GaAs:Mn/AlAs multiple quantum wells. It is demonstrated that the polarization of these bound holes is governed by the properties of the host material rather than by quantum confinement. The... (Read more)
- 2. Phys. Rev. B 75, 085203 (2007) , “Structural and magnetic properties of Mn-implanted Si”, Shengqiang Zhou, K. Potzger, Gufei Zhang, A. Mücklich, F. Eichhorn, N. Schell, R. Grötzschel, B. Schmidt, W. Skorupa, M. Helm, J. Fassbender, and D. GeigerStructural and magnetic properties in Mn-implanted, p-type Si were investigated. High resolution structural analysis techniques such as synchrotron x-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as-implanted samples. Depending on the Mn fluence,... (Read more)
- 3. J. Appl. Phys. 100, 033717 (2006) , “Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism”, Hiroshi Yanagi, Shuichi Ohno, Toshio Kamiya, Hidenori Hiramatsu, Masahiro Hirano, and Hideo HosonoLaCuOSe is a wide band gap p-type semiconductor in which high density positive holes can be doped to exhibit degenerate conduction. These features should allow room-temperature ferromagnetism in a dilute magnetic semiconductor (DMS), which follows a theoretical prediction [T. Dietl et al.,... (Read more)
- 4. Nature 442, 436 (2006) , “Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions”, D. Kitchen, A. Richardella, J. -M. Tang, M. E. Flatt, A. YazdaniThe discovery of ferromagnetism in Mn-doped GaAs1 has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices2, 3, 4. A major hurdle for realistic applications of Ga1-XMnXAs, or other dilute magnetic semiconductors, remains that their ferromagnetic transition temperature is below room temperature. Enhancing ferromagnetism in semiconductors requires us to understand the mechanisms for interaction between magnetic dopants, such as Mn, and identify the circumstances in which ferromagnetic interactions are maximized5. Here we describe an atom-by-atom substitution technique using a scanning tunnelling microscope (STM) and apply it to perform a controlled study at the atomic scale of the interactions between isolated Mn acceptors, which are mediated by holes in GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn–Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-XMnXAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. (Read more)
- 5. Phys. Rev. B 69, 115210 (2004) , “Optical and magnetic properties of Mn in bulk GaN”, A. Wolos, M. Palczewska, M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, S. PorowskiWe report results of electron paramagnetic resonance, magnetization, and optical absorption studies of bulk GaN crystals doped with Mn and, for some samples, codoped with Mg acceptor. The experiments performed show that the charge state of the Mn ion in GaN depends on the Fermi level position in the... (Read more)
- 6. Phys. Rev. B 63, 233202 (2001) , “Tetrahedral Mni4 Cluster in Silicon”, J. Wedekind, H. Vollmer, R. Labusch.Mni40 clusters were investigated by electron paramagnetic resonance in silicon specimens with initial doping concentrations between 1.5×1015?P cm-3 and 5×1016?B cm-3. In n-type samples and in intrinsic samples, we obtained the EPR... (Read more)
- 7. Phys. Rev. B 61, 1918 (2000) , “EPR investigation of manganese clusters in silicon”, J. Martin, J. Wedekind, H. Vollmer, and R. LabuschManganese centers were investigated in silicon specimens with initial doping concentrations between 1.5×1015 P cm-3 and 6×1015 B cm-3. All known Mn centers could be observed but the cluster Mni3Mni was missing in highly-boron-doped... (Read more)
- 8. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 9. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
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