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- 1. Superlatt. Microstruct. 39, 247-256 (2006) , “Optical and morphological features of bulk and homoepitaxial ZnO”, R. Yakimova, G.R. Yazdi, N.T. Son, I. Ivanov, M. Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov , B. SvenssonZnO substrate crystals from two different sources, and epitaxial layers have been studied by SEM, AFM, photoluminescence and EPR. Although fabricated by the same growth principle, i.e. the hydrothermal technique, the substrates differ in terms of purity and structural quality. In the PL spectra of... (Read more)
- 2. Physica B 302-303, 233-238 (2001) , “Complexes of Gold and Platinum with Hydrogen in Silicon”, P. T. Huy and C. A. J. AmmerlaanThree centers that involve gold or platinum and hydrogen have been observed in n-type hydrogenated silicon by electron paramagnetic resonance. The first two centers, labeled Si-NL63 and Si-NL64, were detected in the gold-doped samples revealing hyperfine interaction with two gold atoms for the... (Read more)
- 3. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 4. Phys. Rev. 137, A1520 (1965) , “Paramagnetic Resonance Study of a Deep Donor in Silicon”, G. W. Ludwig.The impurity sulfur acts as a double donor in silicon. Assuming the ion to be substitutional, S+ is analogous to neutral phosphorus, except that the binding energy of the donor electron is much greater. Here we report paramagnetic resonance absorption of S+, including a... (Read more)Si| EPR| Iron S Sulfur U donor n-type .inp files: Si/Sulfur Si/FeS Si/Sulfur2 Si/Sulfur3 | last update: Takahide Umeda
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Updated at 2010-07-20 16:50:39
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