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- 1. Phys. Rev. B 75, 144108 (2007) , “Interaction mechanism between edge dislocations and asymmetrical tilt grain boundaries investigated via quasicontinuum simulations”, T. Shimokawa, T. Kinari, and S. ShintakuThe interactions between edge dislocations and grain boundaries—dislocation pileup, dislocation absorption, and dislocation transmission—are studied by performing quasicontinuum simulations. The 112 asymmetrical tilt grain boundaries with different misorientation angles are used. The... (Read more)
- 2. Appl. Phys. Lett. 89, 042102 (2006) , “Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration”, T. Buonassisi, A. A. Istratov, M. D. Pickett, M. A. Marcus, T. F. Ciszek, and E. R. WeberSynchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate... (Read more)
- 3. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
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Updated at 2010-07-20 16:50:39
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