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- 1. Appl. Phys. Lett. 89, 101111 (2006) , “Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes”, M. Bou Sanayeh, A. Jaeger, W. Schmid, S. Tautz, P. Brick, K. Streubel, and G. BacherThe authors present a detailed investigation of defects generated during catastrophic optical damage (COD) in high-power 650 nm AlGaInP lasers using microphotoluminescence (µ-PL) mapping, focused ion beam (FIB) microscopy, and deep-etching techniques. High-resolution µ-PL... (Read more)
- 2. J. Appl. Phys. 99, 114514 (2006) , “Pinholelike defects in multistack 1.3 µm InAs quantum dot laser”, Wei-Sheng Liu, Holin Chang, Yu-Shen Liu, and Jen-Inn ChyiThe pinholelike defects often observed in multistack InAs quantum dot structures on GaAs have been investigated comprehensively. Due to the high surface stress of InAs quantum dots, the overgrowth of GaAs and InGaAs capping layers on InAs quantum dots is far from conformal and leads to the formation... (Read more)
- 3. J. Appl. Phys. 99, 011101 (2006) , “Degradation of hexagonal silicon-carbide-based bipolar devices”, M. Skowronski and S. HaOnly a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Bond(35 tags)
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