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- 1. Phys. Rev. B 43, 6569 (1991) , “Optically detected magnetic resonance of dislocations in silicon”, V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. OsipyanThe observation of optically detected magnetic resonance (ODMR) signals directly correlated with dislocations in silicon is reported. The ODMR signals are identified as resonances from free electrons, dangling bonds, and quasifree holes bound to a one-dimensional potential in straight dislocations.... (Read more)
- 2. Sov. Phys. JETP 39, 721 (1974) , “Investigation of the Properties of the Dislocation EPR Spectra in Silicon”, S. V. Broude, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.We investigated the properties of the dislocation sEPR spectra in Si in the temperature interval from 1.3 to 150ºK. At helium temperatures we observed anomalies in the behavior of the dispersion signals χ' under conditions of adiabatic rapid passage (APR) through resonance. It is shown that the spectrum of the D centers has a hyperfine (hf) structure, with a line width ∆Hi ~0.2-0.3 Oe (the distance between neighboring hf lines is of the order of their width). It is established that under ARP conditions excitations are transferred between the hf lines as a result of spin-spin interactions with a characteristic time τ3, equal to 3-10 sec in the range 1.3-4.2ºK and weakly dependent on the temperature and on the microwave power. We measured the dependence of the integrated intensity of the absorption signals χ'' on the temperature in the 20-150ºK range. A strong deviation from the Curie low was observed at T=40-50ºK. The temperature dependence of the quantity τ1τ2 was measured in the same temperature range, under the assumption that the hf lines have a Lorentz shape. An anomaly at T=40-50ºK was observed also on the plot of τ1τ2=f(1/T). It is concluded that a magnetic phase transition takes place in the D-center system at 40-50ºK, and consequently the dislocations in Si can be regarded as models of one-demensional chain of spins with exchange interactions.
- 3. Sov. Phys. JETP 33, 623 (1971) , “Electron paramagnetic resonance of dislocations in silicon”, V. A. Grazhulis, Yu. A. Osip'yan
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