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- 1. J. Appl. Phys. 95, 1884-1887 (2004) , “Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy”, M. E. Zvanut, D. M. Matlock, R. L. Henry, Daniel Koleske, Alma WickendenThe microscopic process involved with thermal activation of the Mg acceptors in GaN epitaxial films is investigated using electron paramagnetic resonance (EPR) spectroscopy. Samples were heat treated in dry N2 for 30 min at temperatures between 200 and 1000 °C. Below 850 °C, the... (Read more)
- 2. Phys. Rev. Lett. 90, 137402 (2003) , “Vacancy Defects as Compensating Centers in Mg-Doped GaN”, S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen, L. LIszkay, D. Seghier, H.P. GislasonWe apply positron annihilation spectroscopy to identify VNMgGa complexes as native defects in Mg-doped GaN. These defects dissociate in postgrowth annealings at 500800 °C. We conclude that VNMgGa complexes contribute to... (Read more)
- 3. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5×1018 to 5.0×1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
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Updated at 2010-07-20 16:50:39
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