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- 1. Phys. Rev. B 74, 165202 (2006) , “Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments”, E. Malguth, A. Hoffmann, W. Gehlhoff, O. Gelhausen, M. R. Phillips, and X. XuThis work provides a consistent picture of the structural, optical, and electronic properties of Fe-doped GaN. A set of high-quality GaN crystals doped with Fe at concentrations ranging from 5×1017 cm3 to 2×1020 cm3 is... (Read more)
- 2. Phys. Rev. B 74, 165201 (2006) , “Internal 5E ? 5T2 transition of Fe2+ in GaN”, E. Malguth, A. Hoffmann, and X. XuWe present Fourier transform infrared transmission measurements on Fe-doped GaN. A set of freestanding high-quality GaN:Fe samples with varying Fe concentrations shows a rich absorption structure around 390 meV which is unambiguously assigned to the internal... (Read more)
- 3. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 4. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
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Updated at 2010-07-20 16:50:39
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