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- 1. Phys. Rev. B 75, 035309 (2007) , “Role of hydrogen in hydrogen-induced layer exfoliation of germanium”, J. M. Zahler, A. Fontcuberta i Morral, M. J. Griggs, Harry A. Atwater, and Y. J. ChabalThe role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the mechanism in silicon. A qualitative model for the... (Read more)
- 2. Appl. Phys. Lett. 88, 142112 (2006) , “Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys”, R. N. Pereira, B. Bech Nielsen, J. Coutinho, V. J. B. Torres, P. R. BriddonInfrared absorption spectroscopy and ab initio density functional modeling are used to investigate hydrogen defects that are stable at and above room temperature in proton-implanted Ge-rich SiGe alloys. We find that Si atoms are effective nucleation sites for hydrogen, leading to the... (Read more)
- 3. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 4. Phys. Rev. B 47, 3620-3625 (1993) , “{H,B}, {H,C}, and {H,Si} pairs in silicon and germanium”, Dj. M. Maric, P. F. Meier, S. K. EstreicherThe interactions between interstitial H and substitutional B, C, and Si in crystalline silicon and germanium are studied in molecular clusters at the ab initio Hartree-Fock level with large basis sets. The energetics, electronic structures, and relative stabilities of these pairs are determined. Our... (Read more)
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Updated at 2010-07-20 16:50:39
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