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- 1. J. Appl. Phys. 99, 103102 (2006) , “Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers”, J. M. Sun, S. Prucnal, W. Skorupa, T. Dekorsy, A. Müchlich, M. Helm, L. Rebohle, and T. GebelElectroluminescence (EL) properties in the ultraviolet (UV) range were studied on Gd-implanted indium tin oxide/SiO2:Gd/Si metal-oxide-semiconductor light emitting devices. The efficient UV line at 316 nm from Gd3+ centers shows a maximum power density of 2 mW/cm2... (Read more)
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Updated at 2010-07-20 16:50:39
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