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- 1. Phys. Rev. B 62, 12888-12895 (2000) , “Tungsten in silicon carbide:?Band-gap states and their polytype dependence”, N. Achtziger, G. Pasold, R. Sielemann, C. Hülsen, J. Grillenberger, and W. WitthuhnBand-gap states of tungsten in silicon carbide (polytypes 4H, 6H, and 15R) are investigated by deep-level transient spectroscopy (DLTS) and admittance spectroscopy on n-type SiC. Doping with W is done by ion implantation and annealing. To establish a definite chemical identification of band-gap... (Read more)
- 2. J. Appl. Phys. 70, 5401-5403 (1991) , “Deep-level transient spectroscopy on p-type silicon crystals containing tungsten impurities”, Toshio Ando, Seiichi Isomae, and Chusuke MunakataTungsten deep levels are investigated to clarify energies, which are inconsistent among current research. Hole traps located at 0.41 eV above the top of the valence band are determined to be due to tungsten impurities. The concentration of hole traps is almost one-third of that of the tungsten... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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