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- 1. Phys. Rev. Lett. 98, 095901 (2007) , “Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon”, Yasuo Shimizu, Masashi Uematsu, and Kohei M. ItohWe have determined silicon self-diffusivity at temperatures 735–875 °C based on the Raman shift of longitudinal optical phonon frequencies of diffusion annealed 28Si/30Si isotope superlattices. The activation enthalpy of 3.6 eV is obtained in such low temperature... (Read more)
- 2. Phys. Rev. Lett. 80, 317-320 (1998) , “Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Excitation”, H. Hosono, H. Kawazoe, N. MatsunamiConcentrations of defects in amorphous SiO2 created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E? centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O2 molecules were identified and... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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Others(101 tags)
Technique
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Details
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Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
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Element(65 tags)
Energy(8 tags)
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Sample(17 tags)
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