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- 1. Appl. Phys. Lett. 90, 013116 (2007) , “Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy”, D. M. Cornet, V. G. M. Mazzetti, and R. R. LaPierreInP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the {−211} family of crystal planes for all NW diameters, indicating minimal... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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