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- 1. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
- 2. Mater. Sci. Eng. B 71, 263 (2000) , “Comparison of Electronic Structure and Properties of Hydrogen-Associated and Thermal Double Donors in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and B. PajotInfrared (IR) and electron paramagnetic resonance (EPR) studies of quenching-dependent hydrogen-related double donor (HDD) formed in proton-implanted n-Si and p-Si upon annealing above 300°C were carried out. IR data taken at liquid He and N2 reveal that quenching-dependent IR absorption lines... (Read more)
- 3. Jpn. J. Appl. Phys. 34, 5483-5488 (1995) , “Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals ”, Akito HaraI studied the effects of grown-in hydrogen on the lifetime of Czochralski-grown silicon crystals. It was found that grown-in hydrogen degraded the electrical properties of Czochralski-grown silicon crystals by enhancing the formation of recombination centers, which had a high thermal stability... (Read more)
- 4. Phys. Rev. Lett. 73, 3419 (1994) , “Non-Arrhenius Reorientation Kinetics for the B-H Complex in Si: Evidence for Thermally Assisted Tunneling”, Y. Michael Cheng and Michael StavolaThe B-H complex in Si can be aligned by stress and reorients with an activation energy of roughly 0.2 eV. We combine new measurements of the reorientation kinetics of the B-H complex made by the stress-induced dichroism technique with previous internal friction results to show that the reorientation... (Read more)
- 5. Phys. Rev. Lett. 61, 2786 (1988) , “Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon”, Michael Stavola, K. Bergman, S. J. Pearton, and J. LopataThe motion of hydrogen in the B-H complex in silicon has been studied. An applied stress is used to produce a preferential alignment of the B-H complex at temperatures sufficiently high for the H to move within the complex (above ∼60 K). This alignment of the complexes is detected by comparing the... (Read more)
- 6. Phys. Rev. B 31, 5525-5528 (1985) , “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon”, N. M. JohnsonExperimental results are presented which identify the following chemical reaction as being responsible for compensation of shallow-acceptor impurities when single-crystal silicon is exposed to monatomic hydrogen: A-+h++H0↔(AH)0, where A-... (Read more)
- 7. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
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