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- 1. Phys. Rev. B 75, 144103 (2007) , “Multiscale modeling of point defects in Si-Ge(001) quantum wells”, B. Yang and V. K. TewaryA computationally efficient hybrid Green's function (GF) technique is developed for multiscale modeling of point defects in a trilayer lattice system that links seamlessly the length scales from lattice (subnanometers) to continuum (bulk). The model accounts for the discrete structure of the lattice... (Read more)
- 2. Phys. Rev. B 75, 115113 (2007) , “Structural, electronic, and magnetic properties of Mn-doped Ge nanowires by ab initio calculations”, J. T. Arantes, Antônio J. R. da Silva, and A. FazzioUsing ab initio total energy density-functional theory calculations, we investigated the electronic, structural, and magnetic properties of manganese-doped germanium nanowires. The nanowires have been constructed along the [110] direction and the dangling bonds on the surface have been... (Read more)
- 3. Phys. Rev. Lett. 98, 026801 (2007) , “Surface Dangling-Bond States and Band Lineups in Hydrogen-Terminated Si, Ge, and Ge/Si Nanowires”, R. Kagimura, R. W. Nunes, and H. ChachamWe report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels ε(+/-)... (Read more)
- 4. J. Appl. Phys. 100, 044303 (2006) , “Spin relaxation in a germanium nanowire”, S. Patibandla, S. Pramanik, S. Bandyopadhyay, and G. C. TepperWe report experimental study of spin transport in nanowire spin valve structures consisting of three layerscobalt, germanium, and nickel. The spin diffusion length in the Ge is estimated to be about 400 nm at 1.9 K and the corresponding spin relaxation time is about 4 ns. At 100 K, the... (Read more)
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Updated at 2010-07-20 16:50:39
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