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- 1. Appl. Phys. Lett. 89, 222101 (2006) , “Reversible creation and annihilation of a local leakage path in HfO2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy”, K. Yamamura, K. Kita, A. Toriumi, and K. KyunoBy direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in HfO2/GeOx stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and... (Read more)
- 2. Appl. Phys. Lett. 88, 212112 (2006) , “Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy”, Patrick Fiorenza and Vito RaineriThe dielectric breakdown (BD) kinetics of silicon dioxide (SiO2) thin films thermally grown on 4H-SiC was determined by comparison between I-V measurements on large area (up to 1.96×105 cm2) metal-oxide-semiconductor structures and... (Read more)
- 3. J. Appl. Phys. 100, 023711 (2006) , “Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy”, S.-D. Tzeng and S. GwoCharge trapping properties of electrons and holes in ultrathin nitride-oxide-silicon (NOS) structures were quantitatively determined by variable-temperature electrostatic force microscopy (EFM). From charge retention characteristics obtained at temperatures between 250 and 370 °C and assuming... (Read more)
- 4. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 5. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7×7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7×7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
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Updated at 2010-07-20 16:50:39
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