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- 1. Phys. Rev. Lett. 98, 206406 (2007) , “Role of Intermolecular Coupling in the Photophysics of Disordered Organic Semiconductors: Aggregate Emission in Regioregular Polythiophene”, Jenny Clark, Carlos Silva, Richard H. Friend, and Frank C. SpanoWe address the role of excitonic coupling on the nature of photoexcitations in the conjugated polymer regioregular poly(3-hexylthiophene). By means of temperature-dependent absorption and photoluminescence spectroscopy, we show that optical emission is overwhelmingly dominated by weakly coupled H... (Read more)
- 2. J. Appl. Phys. 100, 073702 (2006) , “Size and shape effects on excitons and biexcitons in single InAs/InP quantum dots”, N. Chauvin, B. Salem, G. Bremond, G. Guillot, C. Bru-Chevallier, and M. GendrySingle InAs quantum dots grown on an InP vicinal substrate are studied using polarized microphotoluminescence. The study of electron-hole exchange energy splitting reveals that the energy splitting is influenced by quantum confinement. The biexciton binding energies found for single dots grown on... (Read more)
- 3. J. Appl. Phys. 100, 023712 (2006) , “Exciton migration in organic thin films”, Y. C. Zhou, Y. Wu, L. L. Ma, J. Zhou, X. M. Ding, and X. Y. HouLimitations of the analytical method for calculating the exciton distribution in organic thin films, attributed to the improper boundary conditions when the organic film approaches the exciton diffusion length, were analyzed by comparison with an exciton random walk simulation. The random walk... (Read more)
- 4. J. Appl. Phys. 100, 023109 (2006) , “Exciton fine structure and biexciton binding energy in single self-assembled InAs/AlAs quantum dots”, D. Sarkar, H. P. van der Meulen, J. M. Calleja, J. M. Becker, R. J. Haug, and K. PierzThe exciton and biexciton emissions of a series of single quantum dots of InAs in an AlAs matrix have been studied. These emissions consist of linear cross polarized doublets showing large values of both the biexciton binding energy and the fine-structure splitting. At increasing exciton emission... (Read more)
- 5. J. Appl. Phys. 99, 093505 (2006) , “Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects”, S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo, and M. KawasakiThe internal quantum efficiency (int) of the near-band-edge (NBE) excitonic photoluminescence (PL) in ZnO epilayers was significantly improved by eliminating point defects, as well as by the use of ZnO high-temperature-annealed self-buffer layer (HITAB) on a ScAlMgO4 substrate... (Read more)
- 6. J. Appl. Phys. 99, 063709 (2006) , “Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates”, X. Q. Zhang, Z. G. Yao, S. H. Huang, Ikuo Suemune, and H. KumanoHigh-quality ZnO thin films have been grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Free-exciton absorption and exciton-LO phonon absorption peaks are observed in the films at room temperature, indicating that the exciton states are stable even at room temperature. Three... (Read more)
- 7. J. Appl. Phys. 99, 013502 (2006) , “Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy”, Y. S. Jung, W. K. Choi, O. V. Kononenko, and G. N. PaninLuminescence properties of ZnO films, which have been epitaxially grown on c-sapphire (0001) substrates by plasma-assisted molecular beam epitaxy, are investigated by means of different excitation sources and their measurement conditions. With the increase of measurement temperature,... (Read more)
- 8. Phys. Rev. B 74, 235204 (2006) , “Bound excitons in Cu2O: Efficient internal free exciton detector”, J. I. Jang, Y. Sun, B. Watkins, and J. B. KettersonWe report the spectroscopic observation of bound excitons in natural Cu2O samples, which are generated by impurity capture of free excitons. Due to the broken symmetry of a bound exciton, its radiative recombination rate increases, causing a greatly enhanced luminescence intensity... (Read more)
- 9. Phys. Rev. B 74, 195205 (2006) , “Magnetopolaron effect on shallow donors in GaN”, A. Wysmoek, R. Stpniewski, M. Potemski, B. Chwalisz-Pitka, K. Pakua, J. M. Baranowski, D. C. Look, S. S. Park, and K. Y. LeeResonant interaction between longitudinal-optic (LO) phonons and electrons bound on shallow donors in GaN is studied using magnetoluminescence of neutral-donor bound excitons (D0X). The experiments were performed on high-quality freestanding GaN material and heteroepitaxial... (Read more)
- 10. Phys. Rev. B 74, 035213 (2006) , “Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique”, Takashi Kita and Osamu WadaWe have studied bound exciton states of isoelectronic centers of nitrogen-doped GaAs by photoluminescence (PL) spectroscopy. The nitrogen doping has been performed in an atomically controlled way using the (3×3) nitrogen stable surface on GaAs(001), which has succeeded in forming a series of... (Read more)
- 11. Phys. Rev. B 74, 035208 (2006) , “Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN”, D. Karaiskaj, A. Mascarenhas, M. Adamcyk, E. C. Young, and T. TiedjeHigh resolution photoluminescence spectroscopy on heavily doped GaAs:N reveals the existence of excitons bound to a nitrogen cluster. The observed transitions are exceedingly sharp, similar to those observed for excitons bound to nitrogen pairs in high quality GaAs with the narrowest transition... (Read more)
- 12. Phys. Rev. Lett. 97, 227401 (2006) , “Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States”, A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. HallerWe resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine... (Read more)
- 13. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
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