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- 1. Phys. Rev. Lett. 97, 166402 (2006) , “Phosphorus Donors in Highly Strained Silicon”, Hans Huebl, Andre R. Stegner, Martin Stutzmann, Martin S. Brandt, Guenther Vogg, Frank Bensch, Eva Rauls, and Uwe GerstmannThe hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si1-xGex substrates with x0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT... (Read more)
- 2. Phys. Rev. 124, 1068 (1961) , “Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes”, D. K. Wilson, G. Feher.The excited states of the antimony, phosphorus, and arsenic impurities in silicon have been investigated by subjecting samples to a uniaxial stress and observing the change in the electron spin resonance spectrum. The experiments were performed at 1.25°K and ?9000 Mc/sec on silicon samples subjected... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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