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- 1. Appl. Phys. Lett. 88, 252109 (2006) , “Origin of the n-type conductivity of InN: The role of positively charged dislocations”, L. F. J. Piper, T. D. Veal, C. F. McConville, Hai Lu, and W. J. SchaffAs-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm3)... (Read more)
- 2. J. Appl. Phys. 100, 094903 (2006) , “Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers”, V. Lebedev, V. Cimalla, T. Baumann, O. Ambacher, F. M. Morales, J. G. Lozano, and D. González.The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN(0001) pseudosubstrates is reported. The microstructure and the electron transport in InN(0001) films of varying thickness were analyzed by transmission electron microscopy... (Read more)
- 3. J. Appl. Phys. 100, 094902 (2006) , “Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network”, V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, F. M. Morales, J. G. Lozano, and D. GonzálezThe strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy electron diffraction, transmission electron microscopy, and high resolution... (Read more)
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Updated at 2010-07-20 16:50:39
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