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- 1. J. Appl. Phys. 102, 013530 (2007) , “Fluorine-vacancy complexes in Si-SiGe-Si structures”, D. A. Abdulmalik, P. G. Coleman, H. A. W. El Mubarek, and P. AshburnFluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via... (Read more)
- 2. Phys. Rev. B 75, 075206 (2007) , “Isotope dependence of the vibrational lifetimes of light impurities in Si from first principles”, D. West and S. K. EstreicherThe vibrational lifetimes of a range of H-related defects and interstitial O (Oi) in Si, including isotopic substitutions, are calculated from first principles as a function of temperature. The theoretical approach is explained in detail. The vibrational lifetimes of... (Read more)
- 3. Appl. Phys. Lett. 88, 253504 (2006) , “Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories”, T. Umeda, K. Okonogi, K. Ohyu, S. Tsukada, K. Hamada, S. Fujieda, and Y. MochizukiThe variable retention time phenomenon has recently been highlighted as an important issue in dynamic random access memory (DRAM) technology. Based on electrically detected magnetic resonance and simulation studies, we suggest that a single Si vacancy-oxygen complex defect is responsible for this... (Read more)
- 4. J. Appl. Phys. 100, 033523 (2006) , “The CiCs(SiI) defect in silicon: An infrared spectroscopy study”, M. S. Potsidi and C. A. LondosInfrared (IR) spectroscopy was employed for a thorough study of the CiCs(SiI) defect formed in neutron-irradiated carbon-doped Czochralski silicon material. Its IR signals at 987 and 993 cm1, as well as the thermal evolution of the... (Read more)
- 5. Phys. Rev. B 73, 245210 (2006) , “First-principles investigation of a bistable boron-oxygen interstitial pair in Si”, A. Carvalho, R. Jones, M. Sanati, S. K. Estreicher, J. Coutinho, and P. R. BriddonLocal density functional calculations are used to predict and compare the properties of the two distinct interstitial boron-interstitial oxygen (BiOi) complexes recently reported in the literature. The electronic and free energies, as well as the small... (Read more)
- 6. Phys. Rev. B 73, 195209 (2006) , “Electrical activity of the PtH2 complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique”, Vl. Kolkovsky, O. Andersen, L. Dobaczewski, A. R. Peaker, and K. Bonde NielsenHigh-resolution Laplace deep-level spectroscopy combined with the uniaxial stress technique has been used to study stress-energy piezospectroscopic tensor components of the platinum-dihydrogen complex in silicon. The effect of stress on the defect has been observed either as the stress-induced... (Read more)
- 7. Phys. Rev. Lett. 97, 256602 (2006) , “Bistability-Mediated Carrier Recombination at Light-Induced Boron-Oxygen Complexes in Silicon”, Mao-Hua Du, Howard M. Branz, Richard S. Crandall, and S. B. ZhangA first-principles study of the BO2 complex in B-doped Czochralski Si reveals a defect-bistability-mediated carrier recombination mechanism, which contrasts with the standard fixed-level Shockley-Read-Hall model of recombination. An O2 dimer distant from B causes only weak... (Read more)
- 8. Appl. Phys. Lett. 87, 262108 (2005) , “Fast-forming boron-oxygen-related recombination center in crystalline silicon”, Karsten Bothe and Jan SchmidtThe mechanism of a fast carrier lifetime degradation effect proceeding within seconds in boron-doped Czochralski silicon is investigated. The decrease in the carrier lifetime is attributed to the formation of a deep boron-oxygen-related recombination center with a strongly asymmetric... (Read more)
- 9. Phys. Rev. B 72, 045219 (2005) , “Fluorine in Si: Native-defect complexes and the supression of impurity diffusion”, Giorgia M. Lopez, Vincenzo Fiorentini, Giuliana Impellizzeri, Salvatore Mirabella, Enrico NapolitaniThe transient enhanced diffusion of acceptor impurities severely affects the realization of ultrahigh doping regions in miniaturized Si-based devices. Fluorine codoping has been found to suppress this transient diffusion, but the mechanism underlying this effect is not understood. It has been proposed that fluorine-impurity or fluorine–native-defect interactions may be responsible. Here we clarify this mechanism combining first-principles theoretical studies of fluorine in Si and purposely designed experiments on Si structures containing boron and fluorine. The central interaction mechanism is the preferential binding of fluorine to Si-vacancy dangling bonds and the consequent formation of vacancy-fluorine complexes. The latter effectively act as traps for the excess self-interstitials that would normally cause boron transient enhanced diffusion. Instead, fluorine-boron interactions are marginal and do not play any significant role. Our results are also consistent with other observations such as native-defect trapping and bubble formation. (Read more)
- 10. Phys. Rev. B 71, 115204 (2005) , “Electron Spin Resonance Study of Paramagnetic Centers in Neutron-Irradiated Heat-Treated Silicon”, D. Pierreux and A. StesmansElectron spin resonance (ESR) was used to study neutron-induced defects in silicon as functions of anneal temperature Tan. For Tan below 200 °C, the ESR response is dominated by the Si-P3 and Si-P6 spectra, as observed before. At Tan=200 ... (Read more)
- 11. Appl. Phys. Lett. 85, 1538 (2004) , “Observation of fluorine-vacancy complexes in silicon”, P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, M. E. LawWe show direct evidence, obtained by positron annihilation spectroscopy, for the complexing of fluorine with vacancies in silicon. Both float zone and Czochralski silicon wafers were implanted with 30 keV fluorine ions to a fluence of 2×1014 ions/cm2, and studied in the... (Read more)
- 12. Eur. Phys. J. Appl. Phys. 27, 13-19 (2004) , “Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM”, T. Umeda, A. Toda, Y. MochizukiProcess-induced defects are a serious issue for modern sub-micron Si LSIs. To characterize such defects, two different techniques are useful: electrically detected magnetic resonance (EDMR) and transmission electron microscope (TEM), which can detect small (point) and extended defects, respectively. We applied EDMR and TEM to the issue of defect-induced leakage currents in dynamic-random-access memory (DRAM) cells. For our DRAM samples (a 0.25- μm-rule series), although TEM showed no extended defects, EDMR successfully detected two types of point defects: V2+O x (Si divacancy-oxygen complexes) and larger Si vacancies (at least larger than V6). We confirmed that these defects are the source of DRAM leakage currents. The observed defects were formed by ion implantation processes, but were more thermally stable than those in bulk Si crystals. The origins of this enhanced stability are attributed to the presence of oxygen atoms and a strong mechanical strain in LSIs. To clarify the origin of the complicated strain in LSI structures, we can directly measure the local-strain distribution in DRAM samples by means of convergent-beam electron diffraction (CBED) using TEM, which provides us with a valuable hint for understanding the formation mechanism of process-induced defects. (Read more)
- 13. Phys. Rev. Lett. 93, 245901 (2004) , “Ab Initio Calculations to Model Anomalous Fluorine Behavior”, Milan Diebel, Scott T. Dunhammplanted fluorine is observed to behave unusually in silicon, manifesting apparent uphill diffusion and reducing diffusion and enhancing activation of boron. In order to investigate fluorine behavior, we calculate the energy of fluorine defect structures in the framework of density functional theory. In addition to identifying the ground-state configuration and diffusion migration barrier of a single fluorine atom in silicon, a set of energetically favorable fluorine defect structures were found (FnVm). The decoration of vacancies and dangling silicon bonds by fluorine suggests that fluorine accumulates in vacancy-rich regions, which explains the fluorine redistribution behavior reported experimentally. (Read more)
- 14. Phys. Rev. Lett. 90, 155901 (2003) , “Fluorine in Silicon: Diffusion, Trapping, and Precipitation”, X. D. Pi, C. P. Burrows, P. G. ColemanThe effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12±0.08 eV. After a long annealing time at 700ºC, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range. (Read more)
- 15. Appl. Phys. Lett. 78, 1571 (2001) , “Hydrogen Passivation and Activation of Oxygen Complexes in Silicon”, S. N. Rashkeev, M. Di Ventra, and S. T. PantelidesWe report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a... (Read more)
- 16. Physica B 302-303, 233-238 (2001) , “Complexes of Gold and Platinum with Hydrogen in Silicon”, P. T. Huy and C. A. J. AmmerlaanThree centers that involve gold or platinum and hydrogen have been observed in n-type hydrogenated silicon by electron paramagnetic resonance. The first two centers, labeled Si-NL63 and Si-NL64, were detected in the gold-doped samples revealing hyperfine interaction with two gold atoms for the... (Read more)
- 17. Mater. Sci. Eng. B 71, 263 (2000) , “Comparison of Electronic Structure and Properties of Hydrogen-Associated and Thermal Double Donors in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and B. PajotInfrared (IR) and electron paramagnetic resonance (EPR) studies of quenching-dependent hydrogen-related double donor (HDD) formed in proton-implanted n-Si and p-Si upon annealing above 300°C were carried out. IR data taken at liquid He and N2 reveal that quenching-dependent IR absorption lines... (Read more)
- 18. Phys. Rev. B 61, 7448-7458 (2000) , “Hydrogen passivation of the selenium double donor in silicon:?A study by magnetic resonance”, P. T. Huy, C. A. J. Ammerlaan, T. Gregorkiewicz, D. T. Don.The passivation by hydrogen of selenium double donors in silicon has been investigated by magnetic resonance. Hydrogen was introduced by heat treatment at high temperatures in an atmosphere of water vapor. Two spectra were observed, labeled Si-NL60 and Si-NL61 for further reference, both showing... (Read more)
- 19. Phys. Rev. B 61, 4659-4666 (2000) , “Identification of the Oxygen-Vacancy Defect Containing a Single Hydrogen Atom in Crystalline Silicon”, P. Johannesen, B. Bech Nielsen, J. R. Byberg.Float-zone and Czochralski-grown silicon crystals have been implanted with protons or deuterons at ?50 K. Electron paramagnetic resonance measurements reveal a new signal in the spectrum of the Czochralski-grown (oxygen-rich) material. This signal is strongly temperature dependent, displaying a... (Read more)
- 20. Phys. Rev. B 61, 2657 (2000) , “Divacancy-Tin Complexes in Electron-Irradiated Silicon Studied by EPR”, M. Fanciulli, J. R. Byberg.n- and p-type float-zone silicon containing 1018-cm-3 tin were irradiated with 2 MeV electrons to a dose of 1018 cm-2 and subsequently examined by electron paramagnetic resonance (EPR). The p-type material yields only the well-known Si-G29 signal due to... (Read more)
- 21. Phys. Rev. B 61, 1918 (2000) , “EPR investigation of manganese clusters in silicon”, J. Martin, J. Wedekind, H. Vollmer, and R. LabuschManganese centers were investigated in silicon specimens with initial doping concentrations between 1.5×1015 P cm-3 and 6×1015 B cm-3. All known Mn centers could be observed but the cluster Mni3Mni was missing in highly-boron-doped... (Read more)
- 22. phys. stat. sol. (b) 221, 625-631 (2000) , “Identification of the Gold-Lithium Defect L1 in Silicon with the Trigonal Centre Au2--(Li+)3 by Electrical, Optical and Magnetic Resonance Spectroscopy”, B. Langhanki, J. –M. SpaethN-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to... (Read more)
- 23. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 24. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 25. J. Appl. Phys. 54, 179-183 (1983) , “The Mechanism of the Enhancement of Divacancy Production by Oxygen During Electron Irradiation of Silicon. II. Computer Modeling”, G. S. Oehrlein, I. Krafcsik, J. L. Lindström, A. E. Jaworowski, and J. W. CorbettNumerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results... (Read more)
- 26. Phys. Rev. B 9, 4351-4361 (1974) , “EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress”, Young-Hoon Lee and James W. CorbettThe stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)
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