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- 1. Phys. Rev. B 75, 195206 (2007) , “Effect of defect-enhanced molecular oxygen adsorption on the imbalance of hole versus electron mobility in conjugated polymers”, Chi-Ken Lu, Shu-Ting Pi, and Hsin-Fei MengThe generally observed higher hole mobility relative to electron mobility in conjugated polymers is explained with the defects and adsorbed molecular oxygen. Adsorption of the extrinsic molecular oxygen leads to that electrons are bound more tightly than holes by the traps in the originally... (Read more)
- 2. Phys. Rev. B 74, 245216 (2006) , “Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors”, Hideharu MatsuuraThe density (NA) and energy level (EA) of an acceptor in a p-type wide-band-gap semiconductor (e.g., SiC, GaN, and diamond) are determined by a least-squares fit of the charge neutrality equation to the temperature dependence of the hole... (Read more)
- 3. Phys. Rev. Lett. 97, 255902 (2006) , “Atomistic Mechanism of Boron Diffusion in Silicon”, Davide De Salvador, Enrico Napolitani, Salvatore Mirabella, Gabriele Bisognin, Giuliana Impellizzeri, Alberto Carnera, and Francesco PrioloB diffuses in crystalline Si by reacting with a Si self-interstitial (I) with a frequency g and so forming a fast migrating BI complex that can migrate for an average length λ. We experimentally demonstrate that both g and λ strongly depend on the free hole... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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