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- 1. J. Appl. Phys. 100, 013518 (2006) , “Photoluminescence analysis on the indium doped Cd0.9Zn0.1Te crystal”, Qiang Li, Wanqi Jie, Li Fu, Ge Yang, Gangqiang Zha, Tao Wang, and Dongmei ZengPhotoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the... (Read more)
- 2. J. Appl. Phys. 99, 053516 (2006) , “Correlation between Zn vacancies and photoluminescence emission in ZnO films”, A. Zubiaga, J. A. García, F. Plazaola, F. Tuomisto, K. Saarinen, J. Zuñiga Pérez, and V. Muñoz-SanjoséPhotoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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