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- 1. Phys. Rev. Lett. 98, 186804 (2007) , “Room-Temperature Electron Spin Dynamics in Free-Standing ZnO Quantum Dots”, William K. Liu, Kelly M. Whitaker, Alyssa L. Smith, Kevin R. Kittilstved, Bruce H. Robinson, and Daniel R. GamelinConduction band electrons in colloidal ZnO quantum dots have been prepared photochemically and examined by electron paramagnetic resonance spectroscopy. Nanocrystals of 4.6 nm diameter containing single S-shell conduction band electrons have g*=1.962 and a room-temperature... (Read more)
- 2. Appl. Phys. Lett. 87, 172108 (2005) , “Production of native donors in ZnO by annealing at high temperature in Zn vapor”, L. E. Halliburton, N. C. Giles, N. Y. Garces, Ming Luo, Chunchuan Xu, Lihai Bai, L. A. BoatnerZinc oxide crystals grown by the seeded chemical vapor transport method have been annealed in zinc vapor at 1100 °C for 30 min. These thermochemical reduction treatments produce a deep red coloration in the crystals and increase their n-type electrical conductivity. Electron paramagnetic... (Read more)
- 3. J. Magn. Magn. Mater. 302, 118 (2005) , “Magnetism origin of Mn-doped ZnO nanoclusters”, J.H. Li, D.Z. Shen, J.Y. Zhang, D.X. Zhao, B.S. Li, Y.M. Lu, Y.C. Liu , X.W. FanZnMnO nanoclusters were synthesized by the sol–gel method. The structural and magnetic characters were investigated. The XRD spectrum shows ZnMnO nanoclusters are hexagonal wurtzite structures and a small quantity of ZnMn2O4 phase is also present in the spectrum. The percentages of Zn and Mn... (Read more)
- 4. J. Phys. Chem. Solids 63, 555-559 (2002) , “OH− impurities in co-doped LiNbO3:Cr 3+:ZnO congruent crystals”, G. A. Torchia, J. O. Tocho , F. JaqueInfrared optical absorption has been used to study OH−impurities into congruent co-doped LiNbO3:Cr3+:ZnO crystals doped with different Zn2+ concentration. The OH− IR absorption spectra present three bands that can be associated with different OH− complex centres available in the... (Read more)
- 5. Phys. Rev. Lett. 85, 417 (2000) , “Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of ZnS- in Si”, H. Schroth, K. L. La?mann, S. Vo?, H. Bracht.Electric-dipole spin resonance of the deep acceptor ZnS- in Si reveals close Γ8 and Γ7 ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Landé's formula for the g factors of a 2T2 state split by spin-orbit interaction into Γ8 and Γ7 this nearness can be interpreted as strong quenching of the orbital moment. The observed dependence on the Zn isotopic mass indicates a dynamic contribution of the acceptor atom to the electronic state as is expected for a Jahn-Teller effect. (Read more)
- 6. Appl. Catalysis A 178, 167-176 (1999) , “Reactivity for isomerization of 1-butene on the mixed MoO3–ZnO oxide catalyst”, Kentaro Nakamura, Kazuo Eda, Sadao Hasegawa , Noriyuki SotaniThe mixed MoO3–ZnO catalyst was expected to reveal the new function as a catalyst. The catalyst was characterized by XRD, ESR, XANES and so on. We found that the MoO3–ZnO catalyst was effective for isomerization and metathesis of 1-butene. The defects with the anion vacancy were formed... (Read more)
- 7. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 8. Z. Physik B 23, 171-181 (1976) , “Intrinsic Defects in Electron Irradiated Zinc Oxide”, B. Schallenberge, A. Hausmann
- 9. Solid State Commun. 14, 953-956 (1974) , “Temperature dependence of the ESR spectrum of the zinc vacancy in ZnO”, D. Galland and A. HerveThe temperature dependence of the spectrum of two trapped hole centers introduced by electron irradiation in ZnO is described. The results firmly establish the identification of these centers as being two slightly inequivalent configurations of the zinc vacancy in its negative charge state. (Read more)
- 10. Sov. Phys. Semicond. 5, 1930 (1972) , “EPR of Zinc Atoms in p-Type Silicon”, V. B. Ginodman, P. S. Gladkov, B. G. Zhurkin, B. V. Kornilov.Zinc is a double accepter in silicon and it introduces two levels, E + 0.31 and E + 0.55 eV, into forbidden band [1,2]. The electrical and optical properties of zinc-doped silicon have been investigated by several workers [2-4]. A brief report of the observation of EPR in silicon is given in [5,6]: in these investigations the magnetic field H was perpendicular to the axis of compression of a crystal. Uniaxial compression gave rise to a structure in EPR spectrum of Zn67 and this structure was attributed to the hyperfine interaction of an unpaired hole with the magnetic moment of the Zn67 nucleus. The present paper describes the result of an investigation of the EPR of the Zn- state of zinc in p-type silicon doped with zinc in p-type silicon doped with zinc and phosphorus. The investigation was carried out at liquid helium temperature.
- 11. Phys. Lett. A 33, 1-2 (1970) , “ESR spectra of the zinc vacancy in ZnO”, D. Galland and A. HerveElectron irradiated ZnO single crystals show anisotropic ESR spectra corresponding to a spin and a spin 1 hole centers. Tehy are respectively identified as the negative and the neutral charge states of the zinc vacancy. (Read more)
- 12. Solid State Commun. 8, 1359-1361 (1970) , “Electron paramagnetic resonance associated with Zn vacancies in neutron-irradiated ZnO”, A. L. Taylor, G. Filipovich and G. K. LindebergLines in the EPR spectrum of ZnO crystals irradiated by 3.6 × 1018cm−2 fast neutrons are ascribed to holes on oxygen atoms in the basal plane of O4 tetrahedra which surround Zn vacancies. (Read more)
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