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- 1. J. Appl. Phys. 100, 043706 (2006) , “Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC”, W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, and C. BalkasTemperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique... (Read more)
- 2. Phys. Rev. B 71, 115205 (2005) , “Origin of the 6885-cm–1 luminescence lines in ZnO: Vanadium versus copper”, L. S. Vlasenko, G. D. Watkins, R. HelbigOptical detection of electron paramagnetic resonance reveals the I=7/2 EPR spectrum of V2+ in the sharp photoluminescence (PL) lines often observed at ~6885 cm1 in ZnO, which have universally been assumed previously to arise from copper. An alternative model for... (Read more)
- 3. Phys. Rev. B 65, 125207 (2002) , “Optical detection of electron paramagnetic resonance in low-dislocation-content GaN grown by hydride vapor-phase epitaxy”, C. Bozdog, G. D. Watkins, H. Sunakawa, N. Kuroda, A. UsuiThree broad overlapping photoluminescence bands, centered at ?1.75?eV (red), ?2.2?eV (yellow), and ?2.33?eV (green), are observed in low-dislocation-content GaN grown by the hydride vapor-phase epitaxy method. Optical detection of electron paramagnetic resonance (ODEPR) studies reveal that each is... (Read more)
- 4. Physica B 308-310, 691 (2001) , “Contactless studies of semi-insulating 4H–SiC”, W. E. Carlos, W. J. Moore, G. C. B Braga, J. A. Freitas, Jr. , E. R. Glaser and B. V. ShanabrookSemi-insulating (SI) silicon carbide is important for applications in high-power, high-frequency electronics, such as SiC MESFETs and GaN FETs. In this work, we discuss the use of low-temperature electron paramagnetic resonance (EPR), room- and low-temperature FTIR and photoluminescence as potential... (Read more)
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Updated at 2010-07-20 16:50:39
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