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- 1. Spectrochim. Acta A. 61, 2595-2602 (2005) , “VO2+ ions in zinc lead borate glasses studied by EPR and optical absorption techniques”, P. Giri Prakash , J. Lakshmana RaoElectron paramagnetic resonance (EPR) and optical absorption spectra of vanadyl ions in zinc lead borate (ZnO–PbO–B2O3) glass system have been studied. EPR spectra of all the glass samples exhibit resonance signals characteristic of VO2+ ions. The values of spin-Hamiltonian parameters... (Read more)
- 2. Physica B 308-310, 691 (2001) , “Contactless studies of semi-insulating 4H–SiC”, W. E. Carlos, W. J. Moore, G. C. B Braga, J. A. Freitas, Jr. , E. R. Glaser and B. V. ShanabrookSemi-insulating (SI) silicon carbide is important for applications in high-power, high-frequency electronics, such as SiC MESFETs and GaN FETs. In this work, we discuss the use of low-temperature electron paramagnetic resonance (EPR), room- and low-temperature FTIR and photoluminescence as potential... (Read more)
- 3. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 4. J. Non-Cryst. Solids 58, 165-178 (1983) , “Electron paramagnetic resonance of Cu2+ and V4+ ions in borate glasses”, L. D. Bogomolova , V. A. JachkinThe EPR spectra of Cu2+ and V4+ ions have been studied in binary RO---B2O3 glasses (where R = Ba, Sr, Pb and Zn) and in ternary PbO---ZnO---B2O3 glasses. The main results of an EPR study of alkali-borate glasses are briefly reviewed. Three distinct EPR spectra of Cu2+ ions in barium-borate glasses... (Read more)
- 5. Phys. Rev. B 4, 3250-3252 (1971) , “Spin-Hamiltonian Parameters and Spin-Orbit Coupling for V3+ in ZnO”, R. E. Coffman, Makram I. Himaya, Kathryn NyeuThe spin-Hamiltonian parameters for ZnO: V3+ have been refined using electron-paramagnetic-resonance (EPR) line position calculations. The principal sources of error are discussed. The accurate spin-Hamiltonian parameters are used to discuss the spin-orbit coupling within the 3d manifold... (Read more)
- 6. Phys. Rev. B 1, 1986-1994 (1970) , “Electron Paramagnetic Resonance of V3 + Ions in Zinc Oxide”, G. Filipovich, A. L. Taylor, R. E. CoffmanThe paramagnetic resonance of trace amounts of V3+ in single-crystal hexagonal zinc oxide is reported. The EPR spectrum is fitted with an axially symmetric spin Hamiltonian with five empirically determined parameters: D, gII, g?, A, and B. The spin-Hamiltonian... (Read more)
- 7. Solid State Physics 13, 223-304 (1962) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Electron Spin Resonance in Semiconductors”, G. W. Ludwig, H. H. Woodbury.I. Introduction (p.223): II. The Resonance Technique (p.226): 1. The Spin Hamiltonian (p.226), 2. The Spin Resonance Spectrum (p.231), 3. Experimental Techniques (p.237), III. Resonance Studies in Silicon (p.243): 4. Shallow Donor Impurities (p.244), 5. Shallow Acceptor Impurities (p.259), 6. Transition Metal Ions (p.263), 7. Impurity Pairs (p.273), 8. Radiation Damage Centers (p.280), IV.Resonance Studies in Other Semiconductors (p.286): 9. Germanium (p.286), 10. Graphite and Diamond (p.290), 11. Silicon Carbide (p.293), 12. Indium Antimonide and Gallium Phosphide (p.294), 13. Zinc Sulfide and Related Semiconductors (p.295), Acknowledgments (p.304)
- 8. Phys. Rev. 117, 102 (1960) , “Spin Resonance of Transition Metals in Silicon”, H. H. Woodbury and G. W. LudwigSpin resonance measurements are reported for various charge states of four transition metals in silicon, namely for V++, Cr+, Mn-, Mn++, and Fe0. In each case the g tensor and the hyperfine interaction with the impurity nucleus are isotropic.... (Read more)Si| EPR| Iron Manganese Vanadium .inp files: Si/Mn- Si/Fe Si/Mn4 Si/Vanadium | last update: Masatoshi Sasaki
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