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- 1. Phys. Rev. B 75, 195335 (2007) , “Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces”, A. Stroppa, X. Duan, M. Peressi, D. Furlanetto, and S. ModestiWe present a combined experimental and computational study of the (110) cross-sectional surface of Mn δ-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in detail, namely surface interstitial Mn, isolated and in pairs, and... (Read more)
- 2. Phys. Rev. B 75, 113310 (2007) , “Hole spin polarization in GaAs:Mn/AlAs multiple quantum wells”, V. F. Sapega, O. Brandt, M. Ramsteiner, K. H. Ploog, I. E. Panaiotti, and N. S. AverkievWe study the effect of confinement on the spin polarization of holes bound to Mn acceptors in paramagnetic GaAs:Mn/AlAs multiple quantum wells. It is demonstrated that the polarization of these bound holes is governed by the properties of the host material rather than by quantum confinement. The... (Read more)
- 3. Appl. Phys. Lett. 89, 012505 (2006) , “Diffusion and clustering of substitutional Mn in (Ga,Mn)As”, Hannes Raebiger, Maria Ganchenkova, and Juhani von BoehmThe Ga vacancy mediated microstructure evolution of (Ga,Mn)As during growth and postgrowth annealing is studied using a multiscale approach. The migration barriers for the Ga vacancies and substitutional Mn together with their interactions are calculated using first principles, and temporal... (Read more)
- 4. Nature 442, 436 (2006) , “Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions”, D. Kitchen, A. Richardella, J. -M. Tang, M. E. Flatt, A. YazdaniThe discovery of ferromagnetism in Mn-doped GaAs1 has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices2, 3, 4. A major hurdle for realistic applications of Ga1-XMnXAs, or other dilute magnetic semiconductors, remains that their ferromagnetic transition temperature is below room temperature. Enhancing ferromagnetism in semiconductors requires us to understand the mechanisms for interaction between magnetic dopants, such as Mn, and identify the circumstances in which ferromagnetic interactions are maximized5. Here we describe an atom-by-atom substitution technique using a scanning tunnelling microscope (STM) and apply it to perform a controlled study at the atomic scale of the interactions between isolated Mn acceptors, which are mediated by holes in GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn–Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-XMnXAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. (Read more)
- 5. Phys. Rev. B 74, 245205 (2006) , “Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence”, V. Holý, Z. Matj, O. Pacherová, V. Novák, M. Cukr, K. Olejník, and T. JungwirthA combination of high-resolution x-ray diffraction and a technique of x-ray standing-wave fluorescence at grazing incidence is employed to study the structure of a (Ga,Mn)As-diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a... (Read more)
- 6. Phys. Rev. B 74, 241303(R) (2006) , “Enhancement of interactions between magnetic ions in semiconductors due to declustering”, A. Franceschetti, S. V. Barabash, J. Osorio-Guillen, A. Zunger, and M. van SchilfgaardeIt is often assumed that the exchange interaction between two magnetic ions in a semiconductor host depends only on the distance and orientation of the magnetic ions. Using first-principles electronic structure calculations of Mn impurities in GaAs, we show that the exchange interaction between two... (Read more)
- 7. Phys. Rev. B 74, 235213 (2006) , “Mn 3d electronic configurations in (Ga1−xMnx)As ferromagnetic semiconductors and their influence on magnetic ordering”, F. Kronast, R. Ovsyannikov, A. Vollmer, H. A. Dürr, W. Eberhardt, P. Imperia, D. Schmitz, G. M. Schott, C. Ruester, C. Gould, G. Schmidt, K. Brunner, M. Sawicki, and L. W. MolenkampWe applied x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) at the Mn 2p-3d resonances to study the Mn 3d electronic configuration and the coupling of Mn 3d magnetic moments in various Ga1−xMnxAs films.... (Read more)
- 8. Phys. Rev. B 74, 155203 (2006) , “Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As”, R. C. Myers, B. L. Sheu, A. W. Jackson, A. C. Gossard, P. Schiffer, N. Samarth, and D. D. AwschalomWe study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%2% Mn. Samples are grown by... (Read more)
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Updated at 2010-07-20 16:50:39
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