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- 1. Appl. Phys. Lett. 89, 031912 (2006) , “Formation of nanovoids in high-dose hydrogen implanted GaN”, I. Radu, R. Singh, R. Scholz, U. Gösele, S. Christiansen, G. Brüderl, C. Eichler, and V. HärleThe formation of nanovoids upon high-dose hydrogen implantation and subsequent annealing in GaN is investigated by transmission electron microscopy. The epitaxial GaN layers on sapphire were implanted at room temperature with H2+ ions at 100 keV with a dose of... (Read more)
- 2. J. Appl. Phys. 100, 043513 (2006) , “Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)”, R. M. Fleming and S. M. MyersDeuterated p-type GaN(Mg,2H) films were irradiated at room temperature with 1 MeV protons to create native point defects with a concentration approximately equal to the Mg doping (5×1019 cm3). The samples were then annealed isothermally at a... (Read more)
- 3. Phys. Rev. B 68, 085202 (2003) , “Physics and chemistry of hydrogen in the vacancies of semiconductors”, Bernadett Szûcs, Adam Gali, Zoltán Hajnal, Peter Deák, and Chris G. Van de WalleHydrogen is well known to cause electrical passivation of lattice vacancies in semiconductors. This effect follows from the chemical passivation of the dangling bonds. Recently it was found that H in the carbon vacancy of SiC forms a three-center bond with two silicon neighbors in the vacancy, and... (Read more)
- 4. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5×1018 to 5.0×1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
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Updated at 2010-07-20 16:50:39
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