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- 1. Phys. Rev. B 75, 075201 (2007) , “Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon”, O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, and P. J. SimpsonWe present a detailed study of the comparative thermal evolutions of H- and D-related defects in silicon implanted with 2×1016 H or D/cm2, or coimplanted with 0.25×1016 He/cm2 and 0.7×1016 H/cm2, in both orders.... (Read more)
- 2. Appl. Phys. Lett. 89, 131918 (2006) , “Hydrogen incorporation processes in nanodiamond films studied by isotopic induced modifications of Raman spectra”, Sh. Michaelson, O. Ternyak, A. Hoffman, and Y. LifshitzThe effect of replacing H by D and C-12 by C-13 in the gas species used to grow different types of nanodiamond films on the Raman spectra of these films was studied. The modifications of the Raman spectra were investigated in submicron sized diamond films grown by hot filament chemical vapor... (Read more)
- 3. J. Appl. Phys. 100, 034911 (2006) , “Thermal evolution of hydrogen related defects in hydrogen implanted Czochralski silicon investigated by Raman spectroscopy and atomic force microscopy”, W. Düngen, R. Job, Y. Ma, Y. L. Huang, T. Mueller, W. R. Fahrner, L. O. Keller, J. T. Horstmann, and H. FiedlerMicro-Raman spectroscopy and atomic force microscopy investigations have been applied on hydrogen implanted p-type Czochralski silicon samples to investigate the hydrogen related defects and their evolution after subsequent annealing. The thermal evolution of interstitial-hydrogen and... (Read more)
- 4. J. Appl. Phys. 99, 113520 (2006) , “Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment”, A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. AshokHydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)
- 5. Phys. Rev. B 74, 235214 (2006) , “Raman scattering study of H2 in Si”, M. Hiller, E. V. Lavrov, and J. WeberIsolated interstitial H2 and H2 bound to interstitial oxygen (O–H2) in single-crystalline Si are studied by Raman scattering. Two Raman signals at 3199(1) and 3193(1) cm−1 (T0 K) are identified as ro-vibrational transitions of... (Read more)
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Updated at 2010-07-20 16:50:39
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