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- 1. Appl. Phys. Lett. 88, 224102 (2006) , “Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography”, D. R. Black, J. C. Woicik, M. Erdtmann, T. A. LangdoX-ray topographical images from thin (50 nm) strained-Si films grown on relaxed, planarized crystalline SiGe-on-Si (001) virtual substrates have been imaged by glancing-incidence monochromatic x-ray topography. This extremely asymmetric diffraction geometry, utilizing (311) diffraction planes, can... (Read more)
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All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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Details
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Bond(35 tags)
Defect(interstitial)(18 tags)
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