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- 1. Phys. Rev. Lett. 97, 226401 (2006) , “Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)”, Magnus Hedström, Arno Schindlmayr, Günther Schwarz, and Matthias SchefflerWe propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at... (Read more)
- 2. Physica B 340, 362 (2003) , Elsevier , “Deep levels in rhodium-doped p-type MOCVD GaAs ”, A. Majid, M. Zafar Iqbal, A. Dadgar, D. Bimbergp-type GaAs epilayers grown by metal-organic chemical vapour deposition (MOCVD) technique, doped in situ with rhodium (Rh) impurity, have been studied by deep level transient spectroscopy (DLTS). A composite peak consisting of emission signals from at least two deep levels in the lower-half band gap is identified with Rh. This peak is resolved using double-correlation DLTS (DDLTS) measurements, providing the clear energy positions of the Rh-related deep levels as Ev+0.35 eV and Ev+0.51 eV. Emission rate signatures and other parameters are reported for these deep levels. They are observed to show electric-field dependent emission signatures. No significant minority carrier (electron) deep level could be clearly identified with Rh due to the presence of significant inadvertent features in the injection DLTS spectrum. Results are compared with our earlier study of Rh-doped, n-type, MOCVD GaAs. (Read more)
- 3. Physica B 340, 358 (2003) , “Osmium related deep levels in n-type GaAs ”, M. Zafar Iqbal, A. Majid, A. Dadgar, D. BimbergDeep levels due to 5d transition metal, osmium (Os), in n-type GaAs epitaxial layers grown by metal-organic vapour-phase epitaxy are investigated using deep level transient spectroscopy (DLTS). Two clear and prominent peaks are observed in majority carrier (electron) emission spectra in GaAs:Os samples in addition to a weaker, broad feature at higher temperatures, which are absent in the Os-free, reference samples. The well-resolved, prominent peaks are attributed to deep levels associated with Os impurity having activation energies Ec−0.28 eV and Ec−0.41 eV at a junction electric field of not, vert, similar1.4×105 V/cm. Both of these peaks are found to be field dependent. Detailed data on emission rate signatures, apparent electron capture cross-sections and defect concentrations are reported for these levels. No Os-related deep level peaks could be clearly delineated in minority-carrier injection DLTS, at this stage, although some evidence is found for a low-energy deep level band. (Read more)
- 4. Jpn. J. Appl. Phys. 37, 1939-1944 (1999) , “Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs”, T. Shinagawa, T. OkumuraHydrogen-related metastable defects (M3/M4) in n-GaAs were studied in relation to the EL2 center. We found that the M3/M4 defects were observed only in the crystals containing the EL2 center in the as-grown state after exposure to a hydrogen plasma. The EL3 level, which was tentatively assigned as... (Read more)
- 5. Mater. Res. Soc. Symp. Proc. 573, 107 (1999) , “ELECTRICAL AND OPTICAL STUDY OF CHARGE TRAPS AT PASSIVATED GaAs SURFACES”, Y. Mochizuki
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