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- 1. Appl. Phys. Lett. 89, 031116 (2006) , “Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx”, C. J. Oton, W. H. Loh, and A. J. KenyonDespite the observation by a number of groups of a strong luminescence sensitization effect of erbium ions by excitation exchange from silicon nanoclusters, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low for much of the material... (Read more)
- 2. J. Appl. Phys. 99, 103102 (2006) , “Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers”, J. M. Sun, S. Prucnal, W. Skorupa, T. Dekorsy, A. Müchlich, M. Helm, L. Rebohle, and T. GebelElectroluminescence (EL) properties in the ultraviolet (UV) range were studied on Gd-implanted indium tin oxide/SiO2:Gd/Si metal-oxide-semiconductor light emitting devices. The efficient UV line at 316 nm from Gd3+ centers shows a maximum power density of 2 mW/cm2... (Read more)
- 3. Phys. Rev. B 74, 100201(R) (2006) , “Direct spectroscopic observation of the atomic-scale mechanisms of clustering and homogenization of rare-earth dopant ions in vitreous silica”, Sabyasachi Sen, Rafail Rakhmatullin, Ruslan Gubaidullin, and Andreas PöpplStructural aspects of clustering of rare earth ions in oxide glasses have been studied for the last several years in relation to their applications in photonics. However, the mechanism of homogenization of the spatial distribution of rare earth ions by codoping, typically with Al or P, is still not... (Read more)
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Updated at 2010-07-20 16:50:39
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