Editing Log
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J. Appl. Phys. 100, 064501 (2006) ,
“Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation”, A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, Y. Akasaka, S. Kamiyama, Y. Nara, and K. Yamada
HfO2| PAS XPS/UPS/Auger| Hf4f N1s Oxygen amorphous device dielectric interface p-type vacancy | last update: Takahide Umeda
- last updated at 2006-11-02 11:47:12
Updated at 2010-07-20 16:50:39
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Materials
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Others(101 tags)
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Technique
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Details
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Bond(35 tags)
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Defect(interstitial)(18 tags)
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Defect-type(19 tags)
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Element(65 tags)
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Energy(8 tags)
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Isotope(56 tags)
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Label(303 tags)
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Sample(17 tags)
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Symmetry(15 tags)
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