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Editing Log
. Appl. Phys. Lett. 86, 031903 (2005) , “Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide”, X. D. Chen, C. C. Ling, M. Gong, S. Fung, C. D. Beling, G. Brauer, W. Anwand, W. Skorupa
All papers (3399)
Updated at 2010-07-20 16:50:39
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1329 untagged
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Charge(9 tags)
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Defect(antisite)(6 tags)
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Defect(interstitial)(18 tags)
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Label(303 tags)
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unbundled(2 tags)
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⚠ Our services moved from http://www.kc.tsukuba.ac.jp/div-media/... to http://esrlab.bk.tsukuba.ac.jp/div-media/... in January 2018. The functions of the our services are unchanged. Thank you.