知の環境基盤研究部門

Papers

2002

1) J. Isoya, R. Kosugi, K. Fukuda, S. Yamasaki, "ESR characterization of SiC bulk crystals and SiO₂/SiC interface", Materials Science Forum 389-393, 1025 (2002).
2) N. Mizuochi, J. Isoya, S. Yamasaki, H. Takizawa, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, "EPR study of single silicon vacancy-related defects in 4H- and 6H-SiC", Materials Science Forum 389-393, 497 (2002).
3) N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohsima, H. Itoh, J. Isoya, "Continuous-wave and pulsed EPR study of negatively charged silicon vacancy with S = 3/2 and C_3v symmetry in n-type 4H-SiC", Phys. Rev. B 66, 235202 (2002).

2003

4) J. Isoya, T. Oshima, A. Ohi, N. Morishita, H. Itoh, "ESR characterization of activation of implanted phosphorous ions in silicon carbide", Nuclear Inst. and Methods in Physics Research B 206C, 965 (2003).
5) T. Umeda, Y. Mochizuki, K. Okonogi, K. Hamada "Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits", J. Appl. Phys. 94, 7105-7111 (2003).
6) N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. Isoya, "EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C_3v symmetry and silicon sites", Phys. Rev. B 68, 165206 (2003).
7) J. Isoya, T. Ohshima, N. Morishita, T. Kamiya, H. Itoh, S. Yamasaki "Pulsed EPR studies of shallow donor impurities in SiC", Physica B 340-342, 903 (2003).

2004

8) W. Futako, N. Mizuochi, S. Yamasaki, "In situ ESR observation of interface dangling bond formation processes during ultrathin SiO₂ growth on Si(111)", Phys. Rev. Lett. 92, 105505 (2004).
9) T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, "EPR identification of two types of carbon vacancies in 4H-SiC", Phys. Rev. B 69, 121201(R) (2004).
10) T. Umeda, Y. Ishitsuka, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, "EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC", Materials Science Forum 457-460, 465-468 (2004).
11) E. Abe, K. M. Itoh, J. Isoya, S. Yamasaki, "Electron-spin phase relaxation of phosphorous donors in nuclear-spin-enriched silicon", Phys. Rev. B 70, 033204 (2004).
12) T. Umeda, A. Toda, Y. Mochizuki, "Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM", The European Physical Journal - Applied Physics 27, 13-20 (2004).
13) M. Katagiri, J. Isoya, S. Koizumi, H. Kanda, "Electron spin resonance characterization of phosphorus-doped CVD diamond films", phys. stat. sol. (a) 201, 2451-2456 (2004).
14) Y. Ohba, M. Nishimura, N. Mizuochi, S. Yamauchi, "Structure and Electronic States in a System of Two Nitroxide Radicals Linked Fullerene Studied by Two Dimensional Pulsed Nutation and Time-Resolved Electron Paramagnetic Resonance Spectroscopy", Applied Magnetic Resonance 26, 117-134 (2004).
15) N. Mizuochi, H. Watanabe, J. Isoya, H. Okushi, S. Yamasaki, "Hydrogen-related defects in single crystalline CVD homoepitaxial diamond film studied by EPR", Diamond and Related Materials 13, 765-768 (2004).
16) N. Mizuochi, M. Ogura, H. Watanabe, J. Isoya, H. Okushi, S. Yamasaki, "EPR study of hydrogen-related defects in Boron doped p-type CVD homoepitaxial diamond films", Diamond and Related Materials 13, 2096-2099 (2004).
17) M. Suzuki, S. Koizumi, M. Katagiri, H.Yoshida, N. Sakuma, T. Ono, T. Sakai, "Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers", Diamond and Related Materials 13, 2037-2040 (2004).
18) N. T. Son, E. Janzen, J. Isoya, S. Yamasaki, "Hyperfine interaction of the nitrogen donor in 4H-SiC", Phys. Rev. B 70, 193207 (2004).
19) T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, A. Gali, P. Deak, N. T. Son, E. Janzen, "EPR and theoretical studies of positively-charged carbon vacancy in 4H-SiC", Phys. Rev. B 70, 235212 (2004).
20) M. Katagiri, J. Isoya, S. Koizumi, H. Kanda, "Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition", Appl. Phys. Lett. 85, 6365 (2004).

2005

21) N. T. Son, A. Henry, J. Isoya, E. Janzen, "Eelectron paramagnetic resonance of shallow phosphorous centers in 4H- and 6H-SiC", Material Science Forum 483-485, 515-518 (2005).
22) T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzen, N. Morishita, T. Ohshima, H. Itoh, A. Gali, "EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC", Phys. Rev. B 71 193202 (2005).
23) M. Ogura, N. Mizuochi, S. Yamasaki, H. Okushi, "Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond", Diamond and Related Materials 14, 2023-2026 (2005).
24) Y. Yamazaki, K. Ishikawa, N. Mizuochi, S. Yamasaki, "Structural change in diamond by hydrogen plasma treatment at room temperature", Diamond and Related Materials 14, 1939-1942 (2005).
25) N. Mizuochi, W. Futako, S. Yamasaki, "Experimental Observation of Formation Processes in Si/SiO₂ Inerface Defects using in-situ UHV-ESR System" 2005 MRS Spring Meeting Proceedings, v. 864, paper number E3.1.
26) N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, T. Umeda, J. Isoya, "Spin multiplicity and charge state of a silicon vacancy (T_v_2a) in 4H-SiC determined by pulsed ENDOR", Phys. Rev. B 72, 235208 (2005).

2006

27) N. T. Son, P. Carlsson, J. ul Hassan, E. Janzen, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, H. Itoh, "Divacancy in 4H-SiC", Phys. Rev. Lett. 96, 055501 (2006).
28) N. T. Son, A. Henry, J. Isoya, M. Katagiri, T. Umeda, A. Gali, E. Janzen,"Eelectron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H- and 6H-SiC", Phys. Rev. B 73, 075201 (2006).
29) N. Mizuochi, M. Ogura, J. Isoya, H. Okushi, S. Yamasaki, "Hydrogen passivation effects on carbon dangling bond defects accompanying a nearby hydrogen atom in p-type CVD diamond", Physica B 376-377, 300-303 (2006).

30) T. Umeda, S. Hagiwara, M. Katagiri, N. Mizuochi, J. Isoya, A web-based database system for EPR centers in Semiconductors", Physica B 376-377, 249-252 (2006).
31) J. Isoya, M. Katagiri, T. Umeda, S. Koizumi, H. Kanda, N.T. Son, A. Henry, A. Gali, E. Janzen, "Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC", Physica B 376-377, 358-361 (2006).
32) N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzen, "Identification of divacancies in 4H-SiC", Physica B 376-377, 334-337 (2006).
33) J. Isoya, M. Katagiri, T. Umeda, N.T. Son, A. Henry, E. Janzen, T. Ohshima, N. Morishita, H. Itoh, "Shallow phosphorous donors in 3C-, 4H-, and 6H-SiC", Materials Science Forum 527-529, 593-596 (2006).
34) T. Umeda, N.T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, E. Janzen, "Electron paramagnetic resonance of the HEI4/SI5 center in 4H-SiC, Materials Science Forum 527-529, 543-546 (2006).
35) N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magunsson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzen, "Divacancy model for P6/P7 centers in 4H- and 6H-SiC", Materials Science Forum 527-529, 527-530 (2006).
36) A. Gali, M. Bockstdete, N.T. Son, T. Umeda, J. Isoya, E. Janzen, "Divacancy and its identification : Theory", Materials Science Forum 527-529, 523-526 (2006).
37) M. Bockstedte, A. Gali, T. Umeda, N.T. Son, J. Isoya, E. Janzen, "Signature of the negative carbon vacancy-antisite complex", Materials Science Forum 527-529, 539-542 (2006).
38) N. Mizuochi, H. Watanabe, J. Niitsuma, T. Sekiguchi, H. Okushi, S. Yamasaki, "Hydrogen-vacancy related defect in CVD homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence" Appl. Phys. Lett, 88, 091912 (2006).
39) T. Umeda, N. T. Son, J. Isoya, E. Janzen, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. Bockstdete, "Identification of the carbon antisite-vacancy pair in 4H-SiC", Phys. Rev. Lett. 96, 145501 (2006).
40) H. Watanabe, H. Kume, N. Mizuochi, S. Yamasaki, S. Kanno, H. Okushi, "Nitrogen incorporation in a homoepitaxial diamond thin film" Diamond and Related Materials, in press.
41) T. Umeda, K. Okonogi, K. Ohyu, S. Tsukada, K. Hamada, S. Fujieda, Y. Mochizuki, "Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories", Appl. Phys. Lett, 88, 253504 (2006).

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International Conference

2002

c1) J. Isoya, T. Oshima, A. Ohi, N. Morishita, H. Itoh, “ESR characterization of activation of implanted phosphorous ions in silicon carbide”, The 13th International Conference on Ion Beam Modification of Materials (Sep. 1-6, 2002, Kobe).
c2) J. Isoya, T. Oshima, A. Ohi, N. Morishita, H. Itoh, “EPR characterization of silicon carbide implanted with phosphorous ions”, European Conference on Silicon Carbide and Related Materials (ECSCRM2002) (Sep. 1-6, 2002, Linkoping, Sweden).

2003

c3) J. Isoya, T. Ohshima, N. Morishita, T. Kamiya, H. Itoh, S. Yamasaki, “Pulsed EPR studies of shallow donor impurities in SiC”, 22nd International Conference on Defects in Semiconductors (ICDS-22) (July 28-August 1, 2003, Aarhus, Denmark).
c4) T. Umeda, A. Toda, Y. Mochizuki, “Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM (invited)”, 10th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP-X) (Sep. 29-Oct. 2, 2003, Batz sur mer, France); Report (4 pages in Japanese).
c5) T. Umeda, Y. Ishitsuka, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, “EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC”, 10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003) (Oct. 5-10, 2003, Lyon, France); Report (2 pages in Japanese).
c6) N. Mizuochi, H. Watanabe, J. Isoya, H. Okushi, S. Yamasaki, “Hydrogen-related defect in single crystalline CVD homoepitaxial diamond film studied by EPR”, 14th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide (DIAMOND2003) (Sep. 7-12, 2003, Salzburg, Austria).

2004

c7) M. Katagiri, J. Isoya, S. Koizumi and H. Kanda, “Electron spin resonance characterization of phosphorus-doped CVD diamond films”, Surface and bulk defects in CVD diamond films, IX (Feb. 18-21, 2004, Hasselt, Belgium).
c8) N. Mizuochi, M. Ogura, H. Watanabe, J. Isoya, H. Okushi, S. Yamasaki, “EPR study of hydrogen-related defects in boron doped p-type CVD homoepitaxial diamond films”, The 9th International Conference on New Diamond Science and Technology (March 26-29, 2004, Tokyo, Japan).
c9) W. Futako, N. Mizuochi, S. Yamasaki, “Initial Stage of Defect Formation Process at Si/SiO2 Interface Detected by in-situ UHV-ESR”, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices, (May 26-28, 2004, Tokyo, Japan)
c10) T. Umeda, N. T. Son, Y. Ishitsuka, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, E. Janzen, “Eelectron paramagnetic resonance study of negatively-charged carbon vacancy in 4H-SiC”, European Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Aug. 31-Sep.4, 2004, Bologna, Italy); Report(6 pages in Japanese).
c11) N. T. Son, A. Henry, J. Isoya, E. Janzen, “Eelectron paramagnetic resonance of shallow phosphorous centers in 4H- and 6H-SiC”, European Conference on Silicon Carbide and Related Materials (ECSCRM2004) (Aug. 31-Sep.4, 2004, Bologna, Italy).
c12) J. Isoya, “ESR of phosphorus doped diamond (invited)”, 15th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide (DIAMOND2004), (Sep. 12-17, 2004, Riva Del Garda, Italy).
c13) S. Koizumi, M. Katagiri, H. Kanda, “Electrical properties of lightly phosphorus doped diamond thin films”, 15th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide (DIAMOND2004), (Sep. 12-17, 2004, Riva Del Garda, Italy).
c14) M. Suzuki, S. Koizumi, M. Katagiri, H. Yoshida, N. Sakuma, T. Sakai, “Electrical properties of phosphorus doped CVD homoepitaxial diamond”, 15th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide (DIAMOND2004), (Sep. 12-17, 2004, Riva Del Garda, Italy).
c15) N. Mizuochi, H. Watanabe, J. Isoya, H. Okushi, S. Yamasaki, “Dilution ratio ([CH4]/[H2]) dependence of defects in CVD homoepitaxial diamond films”, 15th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide (DIAMOND2004) , (Sep. 12-17, 2004, Riva Del Garda, Italy).

2005

c16) N. Mizuochi, W. Futako, S. Yamasaki, “Experimental observation of formation processes in Si/SiO2 interface defects using in-situ UHV-ESR system (invited)”, 2005 Materials Research Society Spring Meeting (March 28-April 1, 2005, San Francisco, USA).
c17) N. Mizuochi, H. Watanabe, H. Kato, J. Isoya, H. Okushi, S. Yamasaki, “Nature of the carbon dangling bond defect accompanying a hydrogen atom in CVD homoepitaxial diamond films studied by EPR and CL” The 10th International Conference on New Diamond Science and Technology (ICNDST-10) (May 11-14, 2005, Tsukuba, Japan)
c18) M. Ogura, N. Mizuochi, H. Okushi, S. Yamasaki “Passivation effects of deuterium exposure of B-doped CVD homoepitaxial diamond films.” The 10th International Conference on New Diamond Science and Technology (ICNDST-10) (May 11-14, 2005, Tsukuba, Japan)
c19) M. Katagiri, J. Isoya, S. Koizumi, H. Kanda, “Electron spin resonance characterization of defects in phosphorus-doped diamond films”, The 10th International Conference on New Diamond Science and Technology (May 11-14, 2005, Tsukuba, Japan).
c20) M. Suzuki, S. Koizumi, M. Katagiri, H. Yoshida, N. Sakuma, T. Ono, T. Sakai, “A study of doping properties and electrical properties of phosphorus doped n-type homoepitaxial diamond layers”, The 10th International Conference on New Diamond Science and Technology (May 11-14, 2005, Tsukuba, Japan).
c21) N. Mizuochi, H. Kato, H. Watanabe, J. Isoya, H. Okushi, S. Yamasaki, “EPR and CL study of the carbon dangling bond defect accompanying a hydrogen atom in CVD homoepitaxial diamond films”, The 23rd International Conference on Defects in Semiconductors (ICDS-23) (July 24-29, 2005, Awaji-island, Japan).
c22) Y. Yamazaki, K. Ishikawa, S. Samukawa, N. Mizuochi, S. Yamasaki “Defects creation in diamond by hydrogen plasma treatment at room temperature” The 23rd International Conference on Defects in Semiconductors (ICDS-23) (July 24-29, 2005, Awaji-island, Japan).
c23) J. Isoya, M. Katagiri, T. Umeda, S. Koizumi, H. Kanda, N. T. Son, A. Henry, A. Gali, E. Janzen, “Pulsed EPR studies of phosphorus shallow donors in diamond and SiC”, The 23rd International Conference on Defects in Semiconductors (ICDS-23) (July 24-29, 2005, Awaji-island, Japan).
c24) T. Umeda, S. Hagiwara, M. Katagiri, N. Mizuochi, J. Isoya, “Development of web-based database system for EPR centers in semiconductors”, The 23rd International Conference on Defects in Semiconductors (ICDS-23) (July 24-29, 2005, Awaji-island, Japan).
c25) N. T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzen, “Identification of divacancies in 4H-SiC”, The 23rd International Conference on Defects in Semiconductors (ICDS-23) (July 24-29, 2005, Awaji-island, Japan).
c26) M. Katagiri, J. Isoya, T. Umeda, S. Koizumi, H. Kanda, “ESR characterisation of phosphorus donors in n-type diamond”, 16th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2005), (Sep. 11-16, 2005, Toulouse, France).
c27) Y. Yamazaki, K. Ishikawa, N. Mizuochi, S. Yamasaki,“Structural properties of diamond surface defective layer caused by hydrogen exposure”, 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide (DIAMOND2005), (Sep. 11-16, 2005, Toulouse, France).
c28) H. Watanabe, H. Kume, N. Mizuochi, H. Okushi, S. Yamasaki, “Nitrogen Incorporation in Homoepitaxial Diamond Thin Film”, 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide (DIAMOND2005), (Sep. 11-16, 2005, Toulouse, France).
c29) J. Isoya, M. Katagiri, T. Umeda, N.T. Son, A. Henry, E. Janzen, T. Ohshima, N. Morishita, H. Itoh, “Shallow phosphorous donors in 3C-, 4H-, and 6H-SiC”, International Conference on Silicon Carbide and Related Materials (ICSCRM2005), (Sep. 17-23, 2005, Pittsburgh, USA).
c30) T. Umeda, N.T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, E. Janzen, “Electron paramagnetic resonance of the SI5 center in 4H-SiC”, International Conference on Silicon Carbide and Related Materials (ICSCRM2005), (Sep. 17-23, 2005, Pittsburgh, USA); Report (7 pages in Japanese).
c31)
c32) N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magunsson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzen, “Divacancy model for P6/P7 centers in 4H- and 6H-SiC”, International Conference on Silicon Carbide and Related Materials (ICSCRM2005), (Sep. 17-23, 2005, Pittsburgh, USA).
c33) M. Bockstedte, A. Gali, T. Umeda, N.T. Son, J. Isoya, E. Jazen, “Signature of the negative carbon vacancy-antisite complex”, International Conference on Silicon Carbide and Related Materials (ICSCRM2005), (Sep. 17-23, 2005, Pittsburgh, USA).
c34) A. Gali, M. Bockstedte, N.T. Son, T. Umeda, J. Isoya, E. Janzen, “Divacancy and its identification : Theory”, International Conference on Silicon Carbide and Related Materials (ICSCRM2005), (Sep. 17-23, 2005, Pittsburgh, USA).

2006

c35) K. Okonogi, K. Ohyu, T. Umeda, H. Miyake, S. Fujieda, “Improvement of Data Retention Time Property by Reducing Vacancy-Type Point Defect in DRAM Cell Transistor”, International Reliability Physics Symposium 2006 (Mar. 26-30, 2006, San Jose, USA).
c36) T. Umeda, K. Okonogi, K. Ohyu, S. Tsukada, K. Hamada, Y. Mochizuki, S. Fujieda, “A single vacancy-oxygen complex defect and variable retention time phenomenon in silicon LSI memories”, The 2006 Gordon Research Conference on Defects in Semiconductors (July 2-7, 2006, New London, USA), presentation material(PDF 93KB).
c37) T. Umeda, S. Hagiwara, N. Mizuochi, J. Isoya, “Open web-based databases for defects in semiconductors”, The 2006 Gordon Research Conference on Defects in Semiconductors (July 2-7, 2006, New London, USA), presentation material (PDF 232KB).
c38) T. Umeda, J. Isoya, T. Ohshima, N. Morishita, H. Itoh, “Electron paramagnetic resonance study of carbon antisite-vacancy pair in p-type 4H-SiC”, European Conference on Silicon Carbide and Related Materials (ECSCRM2006), (Sep. 3-7, 2006, Newcastle upon Tyne, UK), Report (6 pages in Japanese).
c39) P. J. Carlsson, N. T. Son, T. Umeda, J. Isoya, E. Janzen, “Deep acceptor levels of the carbon vacancy-carbon antisite pairs in 4H-SiC”, European Conference on Silicon Carbide and Related Materials (ECSCRM2006), (Sep. 3-7, 2006, Newcastle upon Tyne, UK).
c40) K. Ohyu, T. Umeda, K. Okonogi, S. Tsukada, M. Hidaka, S. Fujieda, Y. Mochizuki, “Quantitative identification for the physical origin of variable retention time: a vacancy-oxygen complex defect model”, International Electron Device Meeting (IEDM2006), (Dec. 11-13, 2006, San Francisco, USA).